Fundamentals Of Iii V Semiconductor Mosfets

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Fundamentals Of Iii V Semiconductor Mosfets

Author : Serge Oktyabrsky
ISBN : 1441915478
Genre : Technology & Engineering
File Size : 79.54 MB
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Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Category: Technology & Engineering

Iii V Integrated Circuit Fabrication Technology

Author : Shiban Tiku
ISBN : 9789814669313
Genre : Science
File Size : 52.26 MB
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GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III–V processing, with emphasis on HBTs. It is aimed at practicing engineers and graduate students and engineers new to the field of III–V semiconductor IC processing. The book’s primary purpose is to discuss all aspects of processing of active and passive devices, from crystal growth to backside processing, including lithography, etching, and film deposition.
Category: Science

Handbook For Iii V High Electron Mobility Transistor Technologies

Author : D. Nirmal
ISBN : 9780429862526
Genre : Science
File Size : 34.80 MB
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This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Category: Science

Icicct 2019 System Reliability Quality Control Safety Maintenance And Management

Author : Vinit Kumar Gunjan
ISBN : 9789811384615
Genre : Technology & Engineering
File Size : 65.35 MB
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This book discusses reliability applications for power systems, renewable energy and smart grids and highlights trends in reliable communication, fault-tolerant systems, VLSI system design and embedded systems. Further, it includes chapters on software reliability and other computer engineering and software management-related disciplines, and also examines areas such as big data analytics and ubiquitous computing. Outlining novel, innovative concepts in applied areas of reliability in electrical, electronics and computer engineering disciplines, it is a valuable resource for researchers and practitioners of reliability theory in circuit-based engineering domains.
Category: Technology & Engineering

Advanced Gate Stacks For High Mobility Semiconductors

Author : Athanasios Dimoulas
ISBN : 354071491X
Genre : Technology & Engineering
File Size : 45.26 MB
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This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Category: Technology & Engineering

Iii V Compound Semiconductors

Author : Tingkai Li
ISBN : 9781439815236
Genre : Science
File Size : 45.75 MB
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Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientists and engineers working at the intersection of Si and compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field.
Category: Science

Different Types Of Field Effect Transistors

Author : Momčilo Pejović
ISBN : 9789535131755
Genre : Technology & Engineering
File Size : 71.77 MB
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In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fundamental basis of digital electronic circuits. Up to this point, there are more than 20 different types of field-effect transistors that are incorporated in various applications found in everyday's life. Based on this fact, this book was designed to overview some of the concepts regarding FETs that are currently used as well as some concepts that are still being developed.
Category: Technology & Engineering

Graphene Ge Iii V And Emerging Materials For Post Cmos Applications 2

Author : P. Srinivasan
ISBN : 9781566777957
Genre :
File Size : 77.18 MB
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This issue of ECS Transactions addresses the fundamental material science, characterization, modeling and applications of Graphene, Ge-III-V and Emerging materials designed for alternatives technologies to replace CMOS.
Category:

Silicon On Ferroelectric Insulator Field Effect Transistor Soffet

Author : Azzedin D. Es-Sakhi
ISBN : OCLC:1017737139
Genre : Electronic dissertations
File Size : 50.81 MB
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The path of down-scaling traditional MOSFET is reaching its technological, economic and, most importantly, fundamental physical limits. Before the dead-end of the roadmap, it is imperative to conduct a broad research to find alternative materials and new architectures to the current technology for the MOSFET devices. Beyond silicon electronic materials like group III-V heterostructure, ferroelectric material, carbon nanotubes (CNTs), and other nanowire-based designs are in development to become the core technology for non-classical CMOS structures. Field effect transistors (FETs) in general have made unprecedented progress in the last few decades by down-scaling device dimensions and power supply level leading to extremely high numbers of devices in a single chip. High density integrated circuits are now facing major challenges related to power management and heat dissipation due to excessive leakage, mainly due to subthreshold conduction. Over the years, planar MOSFET dimensional reduction was the only process followed by the semiconductor industry to improve device performance and to reduce the power supply. Further scaling increases short-channel-effect (SCE), and off-state current makes it difficult for the industry to follow the well-known Moore’s Law with bulk devices. Therefore, scaling planar MOSFET is no longer considered as a feasible solution to extend this law. The down-scaling of metal-oxide-semiconductor field effect transistors (MOSFETs) leads to severe short-channel-effects and power leakage at large-scale integrated circuits (LSIs). The device, which is governed by the thermionic emission of the carriers injected from the source to the channel region, has set a limitation of the subthreshold swing (S) of 60 mV/decade at room temperature. Devices with ‘S’ below this limit is highly desirable to reduce the power consumption and maintaining a high Ion/Ioff current ratio. Therefore, the future of semiconductor industry hangs on new architectures, new materials or even new physics to govern the flow of carriers in new switches. As the subthreshold swing is increasing at every technology node, new structures using SOI, multi-gate, nanowire approach, and new channel materials such as III–V semiconductor have not satisfied the targeted values of subthreshold swing. Moreover, the ultra-low-power (ULP) design required a subthreshold slope lower than the thermionic emission limit of 60 mV/decade. This value was unbreakable by the new structure (SOI FinFET). On the other hand, most of the preview proposals show the ability to go beyond this limit. However, those pre-mentioned schemes have publicized very complicated physics, design difficulties, and process non-compatibility. The objective of this research is to discuss various emerging nano-devices proposed for sub-60 mV/decade designs and their possibilities to replace the silicon devices as the core technology in the future integrated circuit. This dissertation also proposes a novel design that exploits the concept of negative capacitance. The new field-effect-transistor (FET) based on ferroelectric insulator named Silicon-On-Ferroelectric Insulator Field effect-transistor (SOFFET). This proposal is a promising methodology for future ultra low-power applications because it demonstrates the ability to replace the silicon-bulk based MOSFET, and offers a subthreshold swing significantly lower than 60 mV/decade and reduced threshold voltage to form a conducting channel. The proposed SOFFET design, which utilizes the negative capacitance of a ferroelectric insulator in the body-stack, is completely different from the FeFET and NCFET designs. In addition to having the NC effect, the proposed device will have all the advantages of an SOI device. Body-stack that we are intending in this research has many advantages over the gate-stack. First, it is more compatible with the existing processes. Second, the gate and the working area of the proposed SOFFET is like the planar MOSFET. Third, the complexity and ferroelectric material interferences are shifted to the body of the device from the gate and the working area. The proposed structure offers better scalability and superior constructability because of the high-dielectric buried insulator. Here we are providing a very simplified model for the structure. Silicon-on-ferroelectric leads to several advantages including low off-state current and shift in the threshold voltage with the decrease of the ferroelectric material thickness. Moreover, having an insulator in the body of the device increases the controllability over the channel, which leads to the reduction in the short-channel-effect (SCE). The proposed SOFFET offers low value of subthreshold swing (S) leading to better performance in the on-state. The off-state current is directly related to S. So, the off-state current is also minimum in the proposed structure.
Category: Electronic dissertations

Iii Nitride Electronic Devices

Author : Rongming Chu
ISBN : 9780128175446
Genre : Electronic apparatus and appliances
File Size : 77.48 MB
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III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field
Category: Electronic apparatus and appliances

Fundamentals Of Nanoscaled Field Effect Transistors

Author : Amit Chaudhry
ISBN : 9781461468226
Genre : Technology & Engineering
File Size : 49.48 MB
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Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Category: Technology & Engineering

Silicon Nitride Silicon Dioxide And Emerging Dielectrics 10

Author : R. Ekwal Sah
ISBN : 9781566777100
Genre : Dielectric films
File Size : 28.10 MB
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The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Category: Dielectric films

Atomic Physics 10

Author : H. Narumi
ISBN : 9780444599209
Genre : Science
File Size : 58.69 MB
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Atomic Physics 10 presents the manuscripts of the invited talks delivered at the ICAP-X. The conference continued the tradition of the earlier conferences by reviewing broad areas of fundamental atomic physics and related subjects. In addition to the invited talks two hundred and fifty four contributed papers were presented in two poster sessions. The conference was attended by three hundred and thirty participants from twenty countries and the topics covered include: - fundamental atomic physics including QED; - parity violation and quark physics; - exotic atoms; - electronic structure of atoms and the dynamics associated with advanced laser spectroscopy; - applied and interdisciplinary fields using synchrotron radiation spectroscopy; - atomic processes in hot plasmas and interstellar space; - the quantum Hall effect in solids.
Category: Science

Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 5 New Materials Processes And Equipment

Author : V. Narayanan
ISBN : 9781566777094
Genre : Gate array circuits
File Size : 77.42 MB
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This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Category: Gate array circuits

Semiconductor Physical Electronics

Author : Sheng S. Li
ISBN : 9781461304890
Genre : Science
File Size : 42.39 MB
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The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.
Category: Science

Understanding Modern Transistors And Diodes

Author : David L. Pulfrey
ISBN : 9781139484671
Genre : Technology & Engineering
File Size : 74.16 MB
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Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: • Rigorous theoretical treatment combined with practical detail • A theoretical framework built up systematically from the Schrödinger Wave Equation and the Boltzmann Transport Equation • Covers MOSFETS, HBTs and HJFETS • Uses the PSP model for MOSFETS • Rigorous treatment of device capacitance • Describes the operation of modern, high-performance transistors and diodes • Evaluates the suitability of various transistor types and diodes for specific modern applications • Covers solar cells and LEDs and their potential impact on energy generation and reduction • Includes a chapter on nanotransistors to prepare students and professionals for the future • Provides results of detailed numerical simulations to compare with analytical solutions • End-of-chapter exercises • Online lecture slides for undergraduate and graduate courses
Category: Technology & Engineering

Iii V Microelectronics

Author : Jean-Pierre Nougier
ISBN : UOM:39015025216915
Genre : Technology & Engineering
File Size : 32.57 MB
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As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental physics to modelling and technology, from materials to devices and circuits are reviewed. Containing contributions from European researchers of international repute this volume is the definitive reference source for anyone interested in the latest advances and results of current experimental research in III-V microelectronics.
Category: Technology & Engineering

Radio Frequency Integrated Circuit Engineering

Author : Cam Nguyen
ISBN : 9781118900475
Genre : Technology & Engineering
File Size : 35.31 MB
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Radio-Frequency Integrated-Circuit Engineering addressesthe theory, analysis and design of passive and active RFIC's usingSi-based CMOS and Bi-CMOS technologies, and other non-silicon basedtechnologies. The materials covered are self-contained andpresented in such detail that allows readers with onlyundergraduate electrical engineering knowledge in EM, RF, andcircuits to understand and design RFICs. Organized into sixteenchapters, blending analog and microwave engineering,Radio-Frequency Integrated-Circuit Engineering emphasizesthe microwave engineering approach for RFICs. • Provides essential knowledge in EM and microwaveengineering, passive and active RFICs, RFIC analysis and designtechniques, and RF systems vital for RFIC students andengineers • Blends analog and microwave engineering approaches forRFIC design at high frequencies • Includes problems at the end of each chapter
Category: Technology & Engineering

Ulsi Process Integration 6

Author : C. Claeys
ISBN : 9781566777445
Genre : Integrated circuits
File Size : 56.3 MB
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ULSI Process Integration 6 covers all aspects of process integration. Sections are devoted to 1) Device Technologies, 2) Front-end-of-line integration (gate stacks, shallow junctions, dry etching, etc.), 3) Back-end-of-line integration (CMP, low-k, Cu interconnect, air-gaps, 3D packaging, etc.), 4) Alternative channel technologies (Ge, III-V, hybrid integration), and 5) Emerging technologies (CNT, graphene, polymer electronics, nanotubes).
Category: Integrated circuits