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Noise In Semiconductor Devices

Author : Fabrizio Bonani
ISBN : 9783662045305
Genre : Technology & Engineering
File Size : 48.56 MB
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Provides an overview of the physical basis of noise in semiconductor devices, and a detailed treatment of numerical noise simulation in small-signal conditions. It presents innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions.
Category: Technology & Engineering

Hierarchical Device Simulation

Author : Christoph Jungemann
ISBN : 321101361X
Genre : Technology & Engineering
File Size : 42.83 MB
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This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Category: Technology & Engineering

Deterministic Solvers For The Boltzmann Transport Equation

Author : Sung-Min Hong
ISBN : 9783709107782
Genre : Technology & Engineering
File Size : 78.52 MB
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The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for building the Schrödinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented.
Category: Technology & Engineering

High Frequency Bipolar Transistors

Author : Michael Reisch
ISBN : 354067702X
Genre : Technology & Engineering
File Size : 24.79 MB
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This book provides a rather comprehensive presentation of the physics and modeling of high-frequency bipolar transistors with particular emphasis given to silicon-based devices. I hope it will be found useful by those who do as well as by those who intend to work in the field, as it compiles and extends material presented in numerous publications in a coherent fashion. I've worked on this project for years and did my best to avoid errors. De spite all efforts it is possible that "something" has been overlooked during copy-editing and proof-reading. If you find a mistake please let me know. Michael Reisch Kempten, December 2002 Notation It is intended here to use the most widely employed notation, in cases where the standard textbook notation is different from the SPICE notation, the latter is used. In order to make formulas more readable, model parameters represented in SPICE by a series of capital letters are written here as one capital letter with the rest in the form of a subscript (e.g. XCJC is used here instead of the XCJC used in the SPICE input). Concerning the use of lower-case and capital letters, the following rules are applied: • Time-dependent large-signal quantities are represented by lower-case let ters. The variables 't, v and p therefore denote time-dependent current, voltage and power values.
Category: Technology & Engineering

Low Dielectric Constant Materials For Ic Applications

Author : Paul S. Ho
ISBN : 3540678190
Genre : Science
File Size : 27.60 MB
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Low dielectric materials are an important component of microelectronic devices. In this carefully edited volume the leading researchers give an introduction to and a survey of the various fields of dielectrics for IC integration. The book appeals to materials reserachers, electrical engineers and advanced students.
Category: Science

The Monte Carlo Method For Semiconductor Device Simulation

Author : Carlo Jacoboni
ISBN : 3211821104
Genre : Technology & Engineering
File Size : 23.9 MB
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This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Category: Technology & Engineering

Simulation Of Semiconductor Processes And Devices 2001

Author : Dimitris Tsoukalas
ISBN : 9783709162446
Genre : Technology & Engineering
File Size : 63.95 MB
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This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Category: Technology & Engineering

Fundamentals Of Bias Temperature Instability In Mos Transistors

Author : Souvik Mahapatra
ISBN : 9788132225089
Genre : Technology & Engineering
File Size : 85.83 MB
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This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
Category: Technology & Engineering

Official Journal Patents

Author : Great Britain. Patent Office
ISBN : NYPL:33433060200155
Genre : Patents
File Size : 44.28 MB
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Category: Patents

Physics Briefs

Author :
ISBN : UOM:39015027845208
Genre : Physics
File Size : 21.79 MB
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Category: Physics